About P-channle MOSFET parameters

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leonken

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For the P-channle MOSFET, for example Vth=-0.6V
How large is the typical value of contact potential difference between gate and substrate Φms and bulk Fermi potential ΦB and Vo (a correctin term owing to the threshold shift implant)?
Thanks
 

It is hard to say the exact value. It depends on the substrate conductivity, the ploy doping, the oxide quality and height. You can refer to some semiconductor physics books or some bsim3 model file to get an idea. Thanks.
 

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