Similarly work with M1 and the ISS tail current source (after substituting it with nmos transistor with the given properties) and equation VDS≧VDS,sat to derive the other Vin limit.
Not to give you the answer outright but some hints.
1. In the ICMR, all the MOS must be in saturation.
2. For a MOS to operate in saturation, vds>=Voverdrive.
3. Vgs=Vth+Voverdrive
4. Replace the tail current with a NMOS operating in saturation.