i want to design an equal 4-way power divider without resistor that can handle high power up to 40w and small size for an amplifier.
i find some papers,but i want to all output ports be equal.
do you suggest anything that can satisfy my conditions?:grin:
please help me with details for simulation and drawing.:?::?::?:
thanks
yes i know it,but because of high temperature and burning possibility i want to use none resistors.
please help me in a way that need no transistor and handle high power and equal divide.
thanks.:?:
1. u can use resistors for high temp for example: www.ims-resistors.com/resistors.html
2. if u can't use with resistor because of your layout, than the only problem that u will have not isolation... IL, RL at all ports will be the same.
Not correct
If u looking at simulators like: ADS, AWR etc, so u right
BUT in real live take and perform measurements (before and after removing the resistor) with network and u will see that RL at output side will be practically the same , with small degradation
BUT in real live take and perform measurements (before and after removing the resistor) with network and u will see that RL at output side will be practically the same , with small degradation
As said: I designed and measured many power dividers.
The only explanation that I have for your measurement result is this: was your divider built on very lossy substrate like FR4? Then, because of high insertion loss, return loss for the no-resistor case isn't too bad.
Believe me I do designed also a lot of this, mostly for amplifiers, dummy loads and so on. I used to work with : FR4; Rogers 6010, 5880, 4350; Taconic CER10, etc
First I saw this affect at R6010 (by mistake)...
It does not matter if I believe you. As for all internet forum posts, the reader should not trust any information given here, and better double check himself.
pay attention:: I talk about a new way to this. not wilkinson or ...
I found 2 papers that show new dividers with new shapes.
1- Design technique and performance assessment of new multiport multihole power divider suitable for M(H)MIC's
2- Multiport Power Divider-Combiner Circuits Using Circular-Sector-Shaped Planar Components.
first papers simulation with cst shows S-parameters difference in about 2dB of dividing.2-port by 2-port
but other one in a wide band divide to 4 port with max 1-dB difference.
when i divide with sectoraial divider,amplify with selected 4-transistors, and combine all with sectoraial divider i found S21 between 2dB-5dB amplifying but my transistors have a gain of 7dB.
please say why this happened? and was my work correct?
and help me to do it better.
thanks