naeemmaroof
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I need process parameters to get the following:
sigma_vth = (q* tox / eox ) * sqrt (Na*Wd / (3*L*W)) ---[1]
where
tox is oxide thickness
Na is effective channel doping
Wd is the depletion region width
Now, I have 90 nm spice parameters, but I do not know which parameters represent these values. Specifically
(1) Should I use toxe or toxp (electrical or physical)
(2) Is 'ndep' what is called Na (effective channel doping)?
(3) I can not find any parameter referring to depletion region width. So what is Wd ? What is its value in generic 90nm process ?
Any help please.
Regards,
Naeem
sigma_vth = (q* tox / eox ) * sqrt (Na*Wd / (3*L*W)) ---[1]
where
tox is oxide thickness
Na is effective channel doping
Wd is the depletion region width
Now, I have 90 nm spice parameters, but I do not know which parameters represent these values. Specifically
(1) Should I use toxe or toxp (electrical or physical)
(2) Is 'ndep' what is called Na (effective channel doping)?
(3) I can not find any parameter referring to depletion region width. So what is Wd ? What is its value in generic 90nm process ?
Any help please.
Regards,
Naeem