nitishn5
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Hello Forum,
Why is the process variation of MIMCAP worse than the process variation of a MOSCAP?
The paper linked here
says that MIMCAP can show about ±15% variation over process corners.
My own experiments in the 189nm TSMC process shows the variation to be 20% for a 10pF MIMCAP amd it increases from slow to fast corners.
Why would MIMCAP have any process variation since it is only METAL and SiO2.
Shouldn't it be constant over process corners? What changes over corners to affect the MIMCAP?
Why is the process variation of MIMCAP worse than the process variation of a MOSCAP?
The paper linked here
says that MIMCAP can show about ±15% variation over process corners.
My own experiments in the 189nm TSMC process shows the variation to be 20% for a 10pF MIMCAP amd it increases from slow to fast corners.
Why would MIMCAP have any process variation since it is only METAL and SiO2.
Shouldn't it be constant over process corners? What changes over corners to affect the MIMCAP?