As the channel length decreases in 2D material-based FETs, such as MoS2 FETs, the threshold voltage (Vt) typically shifts towards lower values. This phenomenon occurs due to the increased influence of short-channel effects, such as drain-induced barrier lowering (DIBL), in shorter channel lengths. Additionally, shorter channel lengths can lead to enhanced electrostatic control by the gate, resulting in a decrease in Vt. Therefore, shorter channel lengths often correspond to lower threshold voltages in 2D material-based FETs.