2D MoS2 FET

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sahammed4976

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Is there any relation between the thershold voltage and the channel length of 2D material based FETs, specially for 2D MoS2 FET? I got a right shift of Vt when the channel length is increasing...But I am out of explanatio for this kind phenomena.
 

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There are likely "short channel effects" (to what extent does D-G field
modulate Id?) but their nature, magnitude, dependences ... probably
have to find some papers.
 

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As the channel length decreases in 2D material-based FETs, such as MoS2 FETs, the threshold voltage (Vt) typically shifts towards lower values. This phenomenon occurs due to the increased influence of short-channel effects, such as drain-induced barrier lowering (DIBL), in shorter channel lengths. Additionally, shorter channel lengths can lead to enhanced electrostatic control by the gate, resulting in a decrease in Vt. Therefore, shorter channel lengths often correspond to lower threshold voltages in 2D material-based FETs.
 

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