Am I right in the β,gm,gds,cgs 's calculation of NMOS ?

[orz]

i would appreciate if you could figure out where i am wrong!

this is the model i use: https://www.mosis.com/cgi-bin/cgiwrap/umosis/swp/params/tsmc-018/t92y_mm_non_epi_thk_mtl-params.txt

in the model:
Vth 0.50 volts
K' (Uo*Cox/2) 171.0 uA/V^2
Low-field Mobility 406.07 cm^2/V*s

so i got Cox = K'/(Low-field Mobility) *2 = 8.4222*10^-7 F/cm^2
and Vt = 0.5 V
Cgs = 2/3 * Cox * L * W + Cgso*Weff;
and β = Uo * Cox * W / L
so gm = β( Vgs - Vt )

last one:
gds = λ*id/(1+λ*Vds) ≈λ*id
so the key is λ.
this the way i got it : https://www.edaboard.com/threads/92732/#post404209
in the freq i want , i got the λ accordingly.
then i got the id in the fixed Vgs and Vds.

am i right??

Thank you very much!

 

[Usama Siddiqui]

rest is fine i guess,its just the cgso is not multiplied by Weff like that,and check if your gm=(vgs-vt)/2re here re=vt/id ,as i calculated it through that.