quantized
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I'm finding a LOT of conflicting indications on how to calculate the PS and PD parameters for SPICE FETs. Nominally PD is the "perimeter of the drain". For a simple one-finger transistor that isn't butted up against another transistor, the drain is a rectangular region of diffusion; in one direction its size (let's call this the width) is dictated by the width of the transistor and in the other direction its length is dictated by the design rules (usually some sort of minimum diffusion-overhang-gate-by-X or diffusion-surrounds-contact-by-X rule).
If this diffusion region is W units wide and L units long, is this modeled by PD=2*W+2*L or PD=W+2*L?
The official **broken link removed** is very vague, simply saying "PD and PS are the perimeters of the drain and source junctions, in meters."
In Ken Martin's book there is a footnote on page 52 that very explicitly says "the perimiter does not include the edge between the junction and the active channel". This is in the chapter on SPICE. There's also an example on the following page that computes PS+PD using only three sides of the diffusion region.
The HSPICE MOSFET Models Manual is also obnoxiously vague, but an example on page 52 says "If you do not specify PD, then PDeff = M ⋅ (4 ⋅ HDIFeff + 2 ⋅ Weff)"; the use of (2 ⋅ Weff) rather than just Weff is clearly counting the gate edge of the transistor -- all four sides.
**broken link removed** says "If PS is not specified, then, For GEO=0 or 1, PSeff = 4*HDIFeff+Weff" implying that only three sides of the source are used.
What a mess.
Help! I don't just need an answer, I need to be sure it's the right answer. It's pretty crazy that this isn't clearly specified everywhere it appears, because getting this wrong results in parasitic capacitances that are off by 2x -- that's a huge error; not something you sweep under the rug.
If this diffusion region is W units wide and L units long, is this modeled by PD=2*W+2*L or PD=W+2*L?
The official **broken link removed** is very vague, simply saying "PD and PS are the perimeters of the drain and source junctions, in meters."
In Ken Martin's book there is a footnote on page 52 that very explicitly says "the perimiter does not include the edge between the junction and the active channel". This is in the chapter on SPICE. There's also an example on the following page that computes PS+PD using only three sides of the diffusion region.
The HSPICE MOSFET Models Manual is also obnoxiously vague, but an example on page 52 says "If you do not specify PD, then PDeff = M ⋅ (4 ⋅ HDIFeff + 2 ⋅ Weff)"; the use of (2 ⋅ Weff) rather than just Weff is clearly counting the gate edge of the transistor -- all four sides.
**broken link removed** says "If PS is not specified, then, For GEO=0 or 1, PSeff = 4*HDIFeff+Weff" implying that only three sides of the source are used.
What a mess.
Help! I don't just need an answer, I need to be sure it's the right answer. It's pretty crazy that this isn't clearly specified everywhere it appears, because getting this wrong results in parasitic capacitances that are off by 2x -- that's a huge error; not something you sweep under the rug.