hello EDA fellows..
please help..
I have a paper here..it says it used a 0.35micron standard n-well process. But it also has the following data: Vin: 1.2V~3V and Vo: 3.6V~6V. I'm confused with what they used. Is it the 3.3V or 5V option of the 0.35micron process? I tried to find that in the paper but I can't.
Thank you!!!!!!
hello EDA fellows..
please help..
I have a paper here..it says it used a 0.35micron standard n-well process. But it also has the following data: Vin: 1.2V~3V and Vo: 3.6V~6V. I'm confused with what they used. Is it the 3.3V or 5V option of the 0.35micron process? I tried to find that in the paper but I can't.
Thank you!!!!!!
... used a 0.35micron standard n-well process. But it also has the following data: Vin: 1.2V~3V and Vo: 3.6V~6V. I'm confused with what they used. Is it the 3.3V or 5V option of the 0.35micron process?
If the 5V option is selected, both 3.3V and 5V I/O cells can be used. See this 10-year-old (now discontinued) 3/5V IOlib description for a 0.35µm process: View attachment atc35ioLib.pdf