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Good question!
They are different in some aspects. For example a 20A 600v mos needs very larger Q charge in comparison with a 20A 600v IGBT.
Vth in MOS is usually lower (2-4v) comparing to IGBT(4-6v) and also an IGBT should turn on at 14-16V gate to have low Vsat and for mos 10-12v is enough so Under Volt lockout level can be different.
Dear templemark,
IGBTs are to be used while using high voltage applications,nearly above300v/600v.IGBTs don't have high frequency switching capability like MOSFETs and are used at frequency lower than 30KHz but they can handle high currents and have ability to output greater than 4.5 KW and have good thermal ability above 100Celsius.Much disadvantage of IGBTs is their unavoidable current tail when turning off because their gates cannot dissipate immediately causing loss of power.this tail is due to its design and moreover have no body diode which may be good or bad depending on the applications.
Power MOSFETs have a higher frequency(switching) but to be used lower than 300v moreover they have no current tails. Regards
new IGBTs will work easily up to 100khz.
I am using them in high frequency both hard and soft and with proper design they will easily outperform general use mosfets like IRFP460.
Low speed diode of high voltage mosfets doesn't allow to use them in non ZVS bridge configuration.
new SiC jfets are going to outperform both IGBT and MOSFETS!
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