mmitchell
Advanced Member level 4
Hi,
In datasheet of a P-Channel Power MOSFET Si2333DS I see the symbol of the following. Does anyone have idea why there is a diode drawn inside?
Another question is how ID is defined. This is an P-Channel enhancement MOSFET, and the majority carrier holes would flow from S to D with VD<VS and VG<VS. So if we define source-to-drain as the positive current direction, ID should also be positive.
However, the datasheet page 1 lists negative ID values. So does it mean the positive current direction is D-to-S?
[h=3]Error[/h]I also found in the top-left figure of page 3, VDS, VGS and ID are marked as positive. But for a P-Channel Power MOSFET to work, at least both VDS, VGS should be negative, with ID still depends on the positive direction definition.
As a comparison, in the datasheet of Fairchild BSS84, the axis are labeled as –VDS, -ID, and all VGS’s are negative.
So if Fairchild BSS84 is correct, then Vishay Si2333DS datasheet must be wrong?
Matt
In datasheet of a P-Channel Power MOSFET Si2333DS I see the symbol of the following. Does anyone have idea why there is a diode drawn inside?
Another question is how ID is defined. This is an P-Channel enhancement MOSFET, and the majority carrier holes would flow from S to D with VD<VS and VG<VS. So if we define source-to-drain as the positive current direction, ID should also be positive.
However, the datasheet page 1 lists negative ID values. So does it mean the positive current direction is D-to-S?
[h=3]Error[/h]I also found in the top-left figure of page 3, VDS, VGS and ID are marked as positive. But for a P-Channel Power MOSFET to work, at least both VDS, VGS should be negative, with ID still depends on the positive direction definition.
As a comparison, in the datasheet of Fairchild BSS84, the axis are labeled as –VDS, -ID, and all VGS’s are negative.
So if Fairchild BSS84 is correct, then Vishay Si2333DS datasheet must be wrong?
Matt