rahulloveselectronics
Junior Member level 1
Hello,
I have a doubt regarding the physics involved for the threshold voltage of a mosfet.
If the Source-Bulk voltage is increased above zero (body effect), how would it physically lead to an increase in threshold voltage ?
My understanding was that (referring to an n-channel mosfet), the threshold voltage was physically the gate voltage which would make the minority carrier electron concentration in the surface/interface higher than the hole surface concentration, now when we increase the Vsb > 0, then the hole would be pushed deep into the bulk which means that the hole concentration in the surface is less now, now at a lower gate voltage cant the electron concentration exceed the surface hole concentration and hence the inversion layer occurs at a lower gate voltage.
Could you please correct my thoughts.......
I have a doubt regarding the physics involved for the threshold voltage of a mosfet.
If the Source-Bulk voltage is increased above zero (body effect), how would it physically lead to an increase in threshold voltage ?
My understanding was that (referring to an n-channel mosfet), the threshold voltage was physically the gate voltage which would make the minority carrier electron concentration in the surface/interface higher than the hole surface concentration, now when we increase the Vsb > 0, then the hole would be pushed deep into the bulk which means that the hole concentration in the surface is less now, now at a lower gate voltage cant the electron concentration exceed the surface hole concentration and hence the inversion layer occurs at a lower gate voltage.
Could you please correct my thoughts.......