BarsMonster
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Semiconductor (manufactoring) technology questions
Hi, I've got some questions on semiconductor technology. It would be nice if you could help me here. I know they look random - that's because most of them are already answered, or I found answers myself
1) Could you suggest any good books on optics for lithography? All these aspherical lenses, phase correctness, quadruple illumination, high-NA optics, immersion optics - that kind of things...
2) In production - does every PECVD chamber use only 1 chemical? I.e. 1 chamber per each processing step using different plasma formula. Or there is no much contamination when changing gases?
3) Are there any (hopefully) free software for single transistor simulation (so that you can play with gate oxide for example and see how it works)?
4) Could you suggest what's the differentce in shottky barriers with Si doped to n/p?
5) Could you suggest is that possible to find detailed process descriptions & libraries for 0.5-1um CMOS/NMOS(logic, no HV) processes?
6) What is practical limit for contamination which makes transistors not usable at all? I.e. parameters surely degrade, but I wonder when it's stops working at all. For example a-Si:H transistors are terrible, but we use them - so probably dirty silicon is also somewhat useful.
7) Is that correct that the disadvantages of Ag/Au metallization are the following:
7.Ag: Chemically active, requires interface to Si.
7.Au: Intermetallic compounds with Si formed even at 300C, which is below temperatures used in general ASIC processes.
8 ) Why Si oxidation by HNO3 is not generally used? I doubt everyone love heating things to 1100C...
Hi, I've got some questions on semiconductor technology. It would be nice if you could help me here. I know they look random - that's because most of them are already answered, or I found answers myself
1) Could you suggest any good books on optics for lithography? All these aspherical lenses, phase correctness, quadruple illumination, high-NA optics, immersion optics - that kind of things...
2) In production - does every PECVD chamber use only 1 chemical? I.e. 1 chamber per each processing step using different plasma formula. Or there is no much contamination when changing gases?
3) Are there any (hopefully) free software for single transistor simulation (so that you can play with gate oxide for example and see how it works)?
4) Could you suggest what's the differentce in shottky barriers with Si doped to n/p?
5) Could you suggest is that possible to find detailed process descriptions & libraries for 0.5-1um CMOS/NMOS(logic, no HV) processes?
6) What is practical limit for contamination which makes transistors not usable at all? I.e. parameters surely degrade, but I wonder when it's stops working at all. For example a-Si:H transistors are terrible, but we use them - so probably dirty silicon is also somewhat useful.
7) Is that correct that the disadvantages of Ag/Au metallization are the following:
7.Ag: Chemically active, requires interface to Si.
7.Au: Intermetallic compounds with Si formed even at 300C, which is below temperatures used in general ASIC processes.
8 ) Why Si oxidation by HNO3 is not generally used? I doubt everyone love heating things to 1100C...
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