adnan012
Advanced Member level 1
I am using SD57060 in my project. PA is designed to give 10-30 W at 100MHz.
SD57060 was sold on prototype board by technician. The problem is that Idq is 1.5A at VGS =0. Idq increases when Vgs is increased from 0 to 0.7V. PA can still provide 7-11W power (i did not tried for more power as Idq increase.) VDS is 12-13.6V. My question is that if the LDMOS gate has been damaged by ESD.
SD57060 was sold on prototype board by technician. The problem is that Idq is 1.5A at VGS =0. Idq increases when Vgs is increased from 0 to 0.7V. PA can still provide 7-11W power (i did not tried for more power as Idq increase.) VDS is 12-13.6V. My question is that if the LDMOS gate has been damaged by ESD.