Welcome to our site! EDAboard.com is an international Electronics Discussion Forum focused on EDA software, circuits, schematics, books, theory, papers, asic, pld, 8051, DSP, Network, RF, Analog Design, PCB, Service Manuals... and a whole lot more! To participate you need to register. Registration is free. Click here to register now.
looks like a simple biasing circuit were Vbn and Vcn can be used to bias the N network of lets say for example an opamp, and Vbp and Vcp are used to bias the P network of the same opamp. All the transistors at the far left seem to be part of the start-up circuit.
Thank sir. It used in the op amp. but i dont understand about each mos use for what.
And what is the different of this one and bandgap. because when i simulate it the vcn have the sensitive with temperature 4mv per degree C. i need it for the temperature sensor but i need to understand clearly about it. Thanks again.
It's truely a bias circuit as diemilio said. But it's not a good temperature sensor for its exponential temperature coefficient. Acturally a simple PN junction voltage performs better.
Hope this helps!
Bandgap references are designed by using a circuit which has both a factor (usually a voltage) that increases when temperature increases (PTAT) and one that decreases (CTAT) when temperature increases. using those two factors the temperature dependence of voltages can be cancel out to the first order. For temperature sensors what you need is either just the PTAT or the CTAT circuit, and the best way to do this is by using the base-emitter voltage of a BJT since it's temperature dependence is kind of linear.
This site uses cookies to help personalise content, tailor your experience and to keep you logged in if you register.
By continuing to use this site, you are consenting to our use of cookies.
