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BJT is controlled by current, MOS controlled by voltage.
BJT has p-n junctions between input (base) and collector and emitter, MOS no junctions.
BJT has input current that depends on operation region, MOS has no input current in any region.
BJT operation:
Emitter injects minority carriers (holes or electrons) into base and they are extracted from there by reverse biased collector before electron-hole recombination. So minority carriers are used for current flow.
MOS operation:
When gate voltage is zero the source and drain are disconnected.
But if to apply some voltage to the gate electrical field will attract opposite carriers to surface and when voltage will exceed some threshold value the source and drain will be connected by a shallow inverse conductive channel.
It looks like voltage controlled resistor - the higher voltage the lower resistivity.
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