Continue to Site

Welcome to EDAboard.com

Welcome to our site! EDAboard.com is an international Electronics Discussion Forum focused on EDA software, circuits, schematics, books, theory, papers, asic, pld, 8051, DSP, Network, RF, Analog Design, PCB, Service Manuals... and a whole lot more! To participate you need to register. Registration is free. Click here to register now.

Register Log in

mos parameter extraction

Status
Not open for further replies.
L

lhlbluesky

Banned
Advanced Member level 2
Joined
Mar 30, 2007
Messages
558
Helped
5
Reputation
10
Reaction score
5
Trophy points
1,298
Location
china
Activity points
0
mos parameter

i have met a problem ,
how to extract the model parameter ,such as
lamda,vth,kn,kp,bata ,gamma and so on.

piease give me some methods or advice .
thank you first!
 

mos parameter extraction

Do u mean extracting those parameters from models or from measurements??
 
extraction nmos parameter

hi!

i can help but i need to know what software you are using. is it a spice based software or a cad tool?

- al
 
lx7 transconductance gm

Hi
use some simulation curves to determine them.
such as I-v curve.
you can use i-v curve to find vt kn kp lambda and gamma.
just draw some curves.
see problem 12 that is attached
regards
 

nmos parameter extraction

hi!

Key parameters include KP, LAMBDA, VTO, GAMMA, LD, Weff, and Leff,
gds, gm, gmb. Some of them can be directly obtained from the internal
variables used in HSPICE, for example,
LX7(mn1)≡gate transconductance GM of mn1 device,
LX8(mn1)≡channel conductance GDS of mn1 device,
LX9(mn1)≡back-gate transconductance GMB of mn1 device,
LV1(mn1) ≡effective channel length, leff of mn1 device,
LV2(mn1) ≡effective channel width, weff of mn1 device,
LV9(mn1) ≡VTO of mn1 device,
LV21(mn1) ≡transconductance gain factor,βof mn1 device,
LV22(mn1) ≡GAMMA of mn1 device,
So, KP and LAMBDA can be calculated by using above parameters.

here is a sample code

.dc vds 0.1 3.3 0.1
.meas gds param=('lx8(m1)')
.meas leff param=('lv1(m1)')
.meas weff param=('lv2(m1)')
.meas vto param=('lv9(m1)')
.meas gamma param=('lv22(m1)')
.meas ld param=('(2u-lv1(m1))/2')
.meas kp param=('lv21(m1)*lv1(m1)/lv2(m1)')
.print i(m1) lambda=par('lx8(m1)/(i(m1)-(lx8(m1)*v(3)))') lambda1=par('lx8(m1)/i(m1)')
.plot i(m1)

if you look at the .lis file you will see the measured parameters. Ü

- al
 

what is mos parameter extraction?

acbalbason said:
hi!

Key parameters include KP, LAMBDA, VTO, GAMMA, LD, Weff, and Leff,
gds, gm, gmb. Some of them can be directly obtained from the internal
variables used in HSPICE, for example,
LX7(mn1)≡gate transconductance GM of mn1 device,
LX8(mn1)≡channel conductance GDS of mn1 device,
LX9(mn1)≡back-gate transconductance GMB of mn1 device,
LV1(mn1) ≡effective channel length, leff of mn1 device,
LV2(mn1) ≡effective channel width, weff of mn1 device,
LV9(mn1) ≡VTO of mn1 device,
LV21(mn1) ≡transconductance gain factor,βof mn1 device,
LV22(mn1) ≡GAMMA of mn1 device,
So, KP and LAMBDA can be calculated by using above parameters.

here is a sample code

.dc vds 0.1 3.3 0.1
.meas gds param=('lx8(m1)')
.meas leff param=('lv1(m1)')
.meas weff param=('lv2(m1)')
.meas vto param=('lv9(m1)')
.meas gamma param=('lv22(m1)')
.meas ld param=('(2u-lv1(m1))/2')
.meas kp param=('lv21(m1)*lv1(m1)/lv2(m1)')
.print i(m1) lambda=par('lx8(m1)/(i(m1)-(lx8(m1)*v(3)))') lambda1=par('lx8(m1)/i(m1)')
.plot i(m1)

if you look at the .lis file you will see the measured parameters. Ü

- al
Click to expand...
hi
yes it is true.
but I think he want to obtain some number for manual computation
your code are exact values.
regards
 

i cant post the link but , if you search for

ECE-E432 Microelectronics II
Drexel University Electrical & Computer Engineering
Lab 1. - MOS Device Characterization

that lab should be helpful
 

Re: nmos parameter extraction

acbalbason said:
hi!

Key parameters include KP, LAMBDA, VTO, GAMMA, LD, Weff, and Leff,
gds, gm, gmb. Some of them can be directly obtained from the internal
variables used in HSPICE, for example,
LX7(mn1)≡gate transconductance GM of mn1 device,
LX8(mn1)≡channel conductance GDS of mn1 device,
LX9(mn1)≡back-gate transconductance GMB of mn1 device,
LV1(mn1) ≡effective channel length, leff of mn1 device,
LV2(mn1) ≡effective channel width, weff of mn1 device,
LV9(mn1) ≡VTO of mn1 device,
LV21(mn1) ≡transconductance gain factor,βof mn1 device,
LV22(mn1) ≡GAMMA of mn1 device,
So, KP and LAMBDA can be calculated by using above parameters.

here is a sample code

.dc vds 0.1 3.3 0.1
.meas gds param=('lx8(m1)')
.meas leff param=('lv1(m1)')
.meas weff param=('lv2(m1)')
.meas vto param=('lv9(m1)')
.meas gamma param=('lv22(m1)')
.meas ld param=('(2u-lv1(m1))/2')
.meas kp param=('lv21(m1)*lv1(m1)/lv2(m1)')
.print i(m1) lambda=par('lx8(m1)/(i(m1)-(lx8(m1)*v(3)))') lambda1=par('lx8(m1)/i(m1)')
.plot i(m1)

if you look at the .lis file you will see the measured parameters. Ü

- al
Click to expand...

may i ask for the complete SPICE netlist to obtain the parameters?
 

Status
Not open for further replies.

Similar threads

Part and Inventory Search

Welcome to EDABoard.com

Sponsor

Back
Top