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find the signal path associated in the cell and the read circuitry during read cycle measure the currrents on each node add them all together to get Iread, similarly for the Iwrite cycle to get Iwrite
The SNM can be found in two methods
1. Draw the vin versus vout curves for the inverter and mirror it and find the maximum square between them
2. introduce a noise source at input of the one of the inverter, increase the voltage of the noise source and measure at what noise source voltage the cell flips from its orginal value. that gives ur SNM
Thanks you,
But here we only have the Mcell( 6T SRAM).No part enclosed
I wonder we can culcalate the Iread and Iwrite for it when we know about the size of the transistor of Mcell For example : read bit 0 from Mcell, initialize BL and BLX to VDD,open word line and measure the current throw the passgate
How about your idea
In SNM , I still don't understand about the theory of square.Can you explain detail about it
Thanks a lot
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