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Bond wire oscillators are typical between 500-2000MHz. The problem with the high variability of the bondwire alone is reduced if the pin where the bond is connected is connected to a trace. The variability is high because the cap variation and the bonding variation come together. So typical switched pretuning is needed. The advantage of higher Q of the inductor (~50) is reduced by the need for higher switched tuning. There where also oscillators made by bonding from chippad to chippad. But no production found today. The production variation found for the pin oscillator is sometimes trimmed by cutting trace on board!
Higher frequency designs using exclusive integrated inductors.
Actually, we found silicon Lab have done bond wire for mass product. But I know the variation is very big , need Switching cap to finetue. But there is a more important problem, How do we model the bond wire, If we need the model for simulation ? Do you have any comments ? Thanks
Typical use a 3D time-domain EM analysis. The issue is that the field also induce magnetic coupling to chip internal long wires. So be careful with coupling effects. The inductor Q depend on thickness.
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