020170
Full Member level 4
I have a question while read "the art of analog layout" by written Hastings.
in CHAP 4, 138p, I saw this method to prevent parasitic p channel form in p MOSfet
author present the method figure B.
in my opinion, however, parasitic P channel become large through method B,
because there is too close distance between P+ diffusions
So I thought that the way of prevent parasitic P channel in Fig A is better than one
in Fig B, because the distance is too far between P+ diffusions
How about your thought?
thanks
in CHAP 4, 138p, I saw this method to prevent parasitic p channel form in p MOSfet
author present the method figure B.
in my opinion, however, parasitic P channel become large through method B,
because there is too close distance between P+ diffusions
So I thought that the way of prevent parasitic P channel in Fig A is better than one
in Fig B, because the distance is too far between P+ diffusions
How about your thought?
thanks