hrkhari
Full Member level 4
accumulation varactors
Dear Guys:
In implementing an AMOS where the D-S diffusions (p+doped) is removed in and implementing the bulk contacts (n+) in the place left by D-S in a n-well and p substrate. However this device is not supported by silicon foundries. The question is, if an equivalent nMOS with D-S diffusions (n+ doped) in p substrate, with grounded bulk is used to replace the MOSCAP as described above, I would get the same tuning characteristic plot as described for a typical AMOS device, provided that the tuning node is at the D-S tied together . Can anyone confirm this outcome. Thanks in advance
Rgds
Dear Guys:
In implementing an AMOS where the D-S diffusions (p+doped) is removed in and implementing the bulk contacts (n+) in the place left by D-S in a n-well and p substrate. However this device is not supported by silicon foundries. The question is, if an equivalent nMOS with D-S diffusions (n+ doped) in p substrate, with grounded bulk is used to replace the MOSCAP as described above, I would get the same tuning characteristic plot as described for a typical AMOS device, provided that the tuning node is at the D-S tied together . Can anyone confirm this outcome. Thanks in advance
Rgds