Mabrok
Full Member level 4
Hi,
I am going to do measurements of RF power amplifier, and I have some questions as this is my first time doing the real measurements. The design based on PCB and discrete components, output power capability of about 40 dBm (10 Watt)
1. Regarding the stability, Is k-delta test using simulation in ADS enough to verify the transistor stability? What will happen if the amplifier being unstable during the measurements? Are there any risk whether on PA or VNA?
2. The effect of decoupling or bypass capacitors especially on the transistor?
3. If the 50 ohm input and output are not matching perfectly or poor matching (due to load and source impedance for the real transistor is different from that obtained during the simulation), what will happen for VNA if have a high reflection whether on input or output? How can protect the VNA? Is using attenuator between output of port 2 and input of VNA is sufficient to protect VNA?
I am going to do measurements of RF power amplifier, and I have some questions as this is my first time doing the real measurements. The design based on PCB and discrete components, output power capability of about 40 dBm (10 Watt)
1. Regarding the stability, Is k-delta test using simulation in ADS enough to verify the transistor stability? What will happen if the amplifier being unstable during the measurements? Are there any risk whether on PA or VNA?
2. The effect of decoupling or bypass capacitors especially on the transistor?
3. If the 50 ohm input and output are not matching perfectly or poor matching (due to load and source impedance for the real transistor is different from that obtained during the simulation), what will happen for VNA if have a high reflection whether on input or output? How can protect the VNA? Is using attenuator between output of port 2 and input of VNA is sufficient to protect VNA?