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About ICs with high potential differences within ...

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Oveis.Gharan

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Dear All
Salaam

Recently i have seen some ICs which are used in the circuits such BMS (Battery Monitoring Systems) that tolerates very large potential differences between their pins. For example they support more than 80V potential differences. Is there anyone who could tell me about theirs fabrication process and technologies? Could you please list some of their manufacturers and technologies?
If i want to design such ICs, what should i do?

Thanks in advance.
Oveis
 

80V is nothing. We did 200V parts with no special measures,
no increased pin spacing etc. However what works, and
what regulations laid down from above insist upon, are
two different constraints. Of course I wouldn't go 100V
on a 25-mil lead pitch if it was going to get damp, because
even 12V will start to corrode right quick if left powered
and wet (like a lovingly hand constructed test fixture of
mine, with 28V supply and active pins, worked fine for
the first round of testing but months later, was a mess
of green goo in the contactor; -55C testing condensed
water in spots where the purge fitting was not effective).
 
Hi,

IC Fabs and Foundries use special methods to get these high voltage devices. They can have different source/drain structures, different doping concentrations, different oxide thickness or even different materials.
Just search for High Voltage CMOS Processes, DMOS, LDMOS, VMOS and you will get a bunch of results.

https://www.fujielectric.com/company/tech_archives/pdf/45-02/FER-45-02-063-1999.pdf
https://www.st.com/content/ccc/reso...df/jcr:content/translations/en.CD00004124.pdf

Many of the results are from IEEE so I haven't posted them here. But search and you shall receive.

- - - Updated - - -

Hi,

IC Fabs and Foundries use special methods to get these high voltage devices. They can have different source/drain structures, different doping concentrations, different oxide thickness or even different materials.
Just search for High Voltage CMOS Processes, DMOS, LDMOS, VMOS and you will get a bunch of results.

https://www.fujielectric.com/company/tech_archives/pdf/45-02/FER-45-02-063-1999.pdf
https://www.st.com/content/ccc/reso...df/jcr:content/translations/en.CD00004124.pdf

Many of the results are from IEEE so I haven't posted them here. But search and you shall receive.
 
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