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The Resonant Body Transistor (RBT) consists of a sense transistor embedded directly into a resonator body. This is basically a Si based di-electrically transduced Nano Electro Mechanical (NEM) resonator. RBT combines the benefits of high Q factor of the bar resonator and the excellent sensing capability of field effect transistor into a single device.
ABSTRACT A device is described which permits high- Q frequency selection to be incorporated into silicon integrated circuits. It is essentially an electrostatically excited tuning fork employing field-effect transistor "readout." The device, which is called the resonant gate transistor (RGT), can be batch-fabricated in a manner consistent with silicon technology.
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