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How to discretize a continious doping profìle in sentaurus tcad

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sdutta

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Dear Friends,
I wanna study the random dopant fluctuation effect in mosfet. But in order to do so I have to discretize the doping profile. But I dont know whether I can discretize a continious dopinng profile in SENTAURUS or I have to incorporate it in some other way.

Please help me regarding this matter.
 

are you applying your doping in SNMESH or SPROCESS ?

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look here: http://www.ncbi.nlm.nih.gov/pmc/articles/PMC3552816/


sounds like what you're trying to do
 

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    sdutta

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Thank you sir for your kind reply..... But i am new in SENTAURUS and dont know how to discretize doping in sentaurus mesh....... Sir please help me regarding this matter
 

okay, but you're going to have to give me more than "you want to discretize doping".

are you trying to simulate the processing or growth (as in SPROCESS) for the inter-mixing for dopant incorporation?

or

do you want to apply your own analytic doping profile (as in SNMESH) to just simulate devices?
 

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