Welcome to our site! EDAboard.com is an international Electronics Discussion Forum focused on EDA software, circuits, schematics, books, theory, papers, asic, pld, 8051, DSP, Network, RF, Analog Design, PCB, Service Manuals... and a whole lot more! To participate you need to register. Registration is free. Click here to register now.
What is the difference between incorrect read fault and read destructive fault and how to identify and differentiate these faults on a memory cell.
pls help.
Incorrect read Fault : After reading operation, the cell gives incorrect logic value...but stored bit is not faulty.
Read destructive fault : When performing the read operation, the stored bit is changed....this is happens because the less timing difference between the read and write clock....so it doesn't have proper timing to stable...
Incorrect read Fault (IRF) : After reading operation, the cell gives incorrect logic value...but stored bit is not faulty.
Read destructive fault (RDF) : When performing the read operation, the stored bit is changed....this is happens because the less timing difference between the read and write clock....so it doesn't have proper timing to stable...
I understand the definitions now, but am still confused about the detection of these faults.
Let me explain in detail, In order to detect these faults one need to write a '0' in the memory cell and read the same value. If a cell is stuck at IRF or RDF both the outputs are read from the same bitlines(in a SRAM cell) and the output is always an inverse of the expected output in both the cases.
Now my question is how do I identify/differentiate whether the cell has a Incorrect read fault or a read destructive fault.
RDF is mostly because of the less timing difference between the write and read clock..so by changing the frequency of read and write clock...we can detect the particular fault..
This site uses cookies to help personalise content, tailor your experience and to keep you logged in if you register.
By continuing to use this site, you are consenting to our use of cookies.
