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[SOLVED] doubt in well proximity effect

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samabraham

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I have seen in PDKs spacing for NMOS from Nwell. Can anyone explain how an NMOS will get affected during Nwell fabrication??:!:
please help...
 
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See this freescale presentation:
 

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    Allin

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erikl said:
See this freescale presentation:
Click to expand...

Thanks for the document. But how an NMOS will be affected during implantation of Nwell , NMOS portion will be covered by photoresist during fabrication of Nwell.Please check the attachment. wpe.png
 
Implantati scattering and subsequent side diffusion during
the well drive are statistical processes and some dopant
tail may get to the P- where the NMOS lives, shifting its
threshold (at least, in the regions near the Nwell).

Some finite safe distance for a given max VT shift has to
be declared.
 
samabraham said:
... how an NMOS will be affected during implantation of Nwell , NMOS portion will be covered by photoresist during fabrication of Nwell.
Click to expand...

I think in this case the reason isn't WPE, but STI stress, s. slides 18 ff. of the a.m. presentation.
 

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