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NMOS Transister problem

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yorky

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Consider an NMOS transistor fabricated in a 0.18um process with L= 0.18um and W = 2um. The proces technology is specified to have Cox = 8.6fF/um^2, un = 450cm^2/v*s, and Vth = 0.5v.
a. Find VGS and VDS that Result in the MOSFET operating at the edge of saturation with Id = 100uA.
b. if VGS is kept constant, find VDS that results in Id = 50 uA.

I do not know if I have enough info in order to do this problem some help on how to solve it would be appreciated. Btw this is all the info in the problem.
 

Yep. You've enough info on this. At edge of saturation general assumption is VGS = VDS. Use this in the Id formula find VGS and VDS. Then use that value and find VDS for the next calculation.
 

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using this formula? a713a6eb38e5a4f0531a014f183e9fc8.png
 

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