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Dear Gray
Hi
Are you referring to the boot strap section ? is your problem with understanding how it can drive h side mosfet ? or you are referring tot he internal sections ?
If internal section is your mean :
At first it will have two mosfet as voltage multiplier and then an under voltage lockout . this section is prepared to control dissipations due to the low gate drive supply . if your gate supply ( GS ) be lower than 15 volts , your mosfet will be at linear region that means dissipative region . this section will shut down your IC , if your supply isn't as much as enough .
Best Wishes
Goldsmith
haven't found anything on the web so far.