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Hi,
They're actually electrons as I mentioned and not negative ions. They are the minority carriers from p substrate. As you may recall p type semiconductor material is made by doping it with acceptor atoms which take away one electron from silicon valence band and form holes. Based on the...
Mobility of carriers, holes for pmos and electrons for nmos is the main reason, pmos are more resistive. Old processes used to have 2 to 1 width ratio from pmos to nmos to get same drive strength. Given this when pmoses are connected in series, they're very slow to charge/discharge and hence...
Hi Manu,
These negative ions come from substrate. If you think of a MOSFET with p-type substrate, its majority carriers are holes or positive ions. As soon as you increase the voltage at gate above zero, positive ions near the gate are repelled and a depletion region is formed. It's called...
Hi,
The driven capability and fanout of a stdcell depends upon the effective size of the last pullup and pulldown devices. It is nothing but how much current this device can drive to charge the load at it's output. Though it's depends on technology and several other factors, but typicaly a...
if IN is held stable for two cycles, you essentially have multi cycle ( one additional cycle ) for timing path from IN to first (clka) and second (clkb) flops. Now as IN is mux-select, mux outout is also not changing every cycle but every other cycle so you've one extra cycle on the timing path...
Be very careful when you say hold violation doesn't depend on your clock waveform. In this case what is the design intent ? You can design for worst case setup, but you could easily run into hold problem if driver flop captured new data on back to back clock edges.
Primary source of jitter is clock source/PLL and it's independent of slope along clock nodes, but coupling effects on clock will get worse with slow clock slope.
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