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Hi,
1) I simulated the phase noise of LC VCO at 5GHz in cadence and integrated from fl=10Hz to fh= 2.5GHz to get jitter as follows
Jc=1/(2*pi*fc)sqrt(2*integ(10^PN/10) from fl to fh)
I find it to be 960ps!!
I tried to compare with time average Jc and interated from fl=10Hz to fh=2.5GHz using...
I am specifically asking about a balun where the single ended port is connected to IC pin and differential port is connected to say gate of NMOS transistors. Any ESD event in the single ended port can give rise to large differential swing at the gates as well which may damage the transistor. But...
It is believed that a transformer/balun at the input of the LNA provides ESD protection because primary and secondary are isolated. But a sudden esd discharge will propagate as a large AC signal through the balun and may damage the transistors. How does it protect in this situation?
Thanks
Hi,
I want to measure the noise figure of 140 GHz CMOS LNA using VNA & power source with probe station. The LNA has 8dB gain and 7.5dB noise figure. Is the measurement error going to be very large due to low gain and high noise figure? I am ok with +/-1dB error. Is there any way to minimise the...
Hi, Is there a way to account for high resistivity substrate below inductor in EM simulation software? I am designing an inductor in a CMOS process and using high resistivity substrate layer below inductor to get high Q factor. I have momentum and emx software.
Hi, I am designing a two stage differential amplifier with different i/p common mode voltage and o/p common mode voltage. When I connect it in closed loop using resistors R2 and R1 , dc current will flow due to difference in common mode. Is it ok for dc current to flow when the amplifier will be...
Hello, I am trying to pass the lvs of I/O cell available from pdk. There is no schematic but auCdl, aulvs, symbol, hpiceD ans hspiceS models. I am unanble to pass lvs in Calibre and I get the message "source could not be read", no matching .SUBCKT for cell name etc. I tried black boxing using...
Hi, In addition to active, poly and metal fill layers, do I need to do GCD fill layer for a typical 28nm cmos technology? The kit documents do not clearly explain it. What are the additional fill layers needed a typical 28nm cmos technology?
Can I use an ideal balun and reduce it to a two port problem and do s param -> ABCD pram and the use sqrt(B/C) to find Zoo. Can I use center tap of the balun to evaluate Zoe?
Hi,
I am designing a CPW transmission line in CMOS at millimeter-wave frequencies (>60 GHz). I dont have any gnd plane shielding but only the substrate at the bottom. There is a chance that substrate mode starts affecting. How to check this in an EM simulation tool if any unwanted mode is...
Hi, I want to extract the capacitance of an IC PAD. Unfortunately there are no pins and I cannot pass lvs and do extraction. I may use a metal res to get a pin out and extract but are there better ways to do this?
In ICs, the inductors can magnetically couple to the the substrate and cause eddy current to flow which causes power loss (emf^2/Rsub). To minimize this people put metal (copper, aluminum) shielding below the inductor to prevent magnetic lines of from from reaching substrate. Now the catch is...
Hi,
T lines no matter how long they are, if properly terminated with ZL=Z0=R, always presents a resistive load and no capacitive load. Instead if I use a long trace of line of comparable dimension I get a huge capacitor with the substrate (say). Is there an intuitive way to understand this? or...
Hi,
I want to test an LNA IC. I want to use supply of 0.7V and make it as low noise as possible. I plan to use a 6V lead acid battery and then use a voltage regulator as follows
https://www.ti.com/lit/ds/symlink/tps76201.pdf
Can anybody suggest better ways? The lab power supplies that I have...
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