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ESD protection should be given to individual product at the entry point of signal.
In your block diagram - sensor section (Considered as separate PCB), the TVS diode is connected to Net '+VDC_PWR'. As per comment #2, the other end of the TVS diode is to be connected to chassis. I hope the Net...
It may not immediately fail, but its life is indeterminate under such conditions and not recommended for reliable operation. AVX capacitor can withstand upto 200% for some micro second duration without dielectric breakdown under life test of capacitor. But it is not for normal reliable...
Good practice for Derating the ceramic capacitor is 70% of its rated voltage with Case temperature = 10C less than its Tmax and surface temperature shall not increase more than 20°C.. As worst case, 85% shall be derated.
As per LT spice model, the V at C9 & C10 is ~600V. The max rated voltage...
I2C bus have addresses are either 7 bits or 10 bits.
Ideal case:
For 7 bit: you can have up to 128 devices on the I2C bus, since a 7bit number can be from 0 to 127. Similarly, for 10 bits, 1024 devices.
Practical case:
The speed of operation and cable capacitance will affect the no of devices...
1. You can connect the TVS diode to the chassis on sensor block.
2. In product A:
The signal grounds of the Analog circuits are not allowed to be connected to the chassis, which depends on the system architecture, a combination of resistor (1Mohm) and capacitor (xx nF) (even with diode) are...
It is better to add a inductor or ferrite bead between Soft GND and Chassis GND . By doing this, we can increase protection against ESD related failures of ICs.
It is better to connect TVS diode to CHASSIS. Chassis ground is preferred since it keeps unwanted ESD transient (and also lightning strikes) remnants out of the circuit that is used by the circuits.
Additionally, Having a chassis ground for the TVS that is separated from the analog ground by...
If you want to operate the MOSFET in linear operation, then it is better to connect the source to body (if there is separate terminal for body).
Nowadays, the MOSFET are doesn't have separate body terminal ( internally connected to source during IC fabrication), then you don't have the choice.
The behaviour of MOSFET is due to body effect (back-gate effect).
The threshold voltage (Vth) of MOSFET is related
to Vsb (source-bulk voltage).
The body effect refers to the changes in the threshold voltage by the change in Vsb. Because the body influences the threshold voltage (when it is...
As I mentioned earlier, this flipflop is used to latch error bit, which is actually generated based on the number of uC reset (done by WDM, not power ON reset ) for particular time. There is a hardware circuit (which is working fine) to make this bit and this has given as cp of mentioned...
Refer the cross section view of MOSFET below,
The source and the drain terminal are 'n+ doped region' and the body is p-type substrate. Between "S" and "Body" (also "D" and Body) a diode is present, which must not be forward biased. Hence, the voltage at the "Body" terminal must not be...
With reference to the default state of the D flip flop output is HIGH (As per physical measurement on CCA-2Nos and assuming that is constant), I have done the following implementation to resolve the issue (actually trying to resolve!)
I have changed the expected output as LOW, when event is...
Yes, You are correct, the default state is not mentioned in the datasheet. The default state had got from manufacturer support team before designing. The simulation results show as LOW state (Again, It is also based on the model, may not give the actual IC characteristics)
The state change is defined in the manufacturer datasheet as follows,
From this, the output will be HIGH, only when CP is in rising edge. Then, the output may not be in indeterminate state.
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Refer attached waveform Vcc (vs) CP (vs) D (vs) 1Q
When the Vcc is ON,
o Clock (CP) is in...
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