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Yes, we did the EM simulation using ADS Momentum. We did not take the coupling of the DC wires into consideration. Also, the screws are used for the heat sink placed below.
Thank you for the suggestion. I will definitely look into this.
1714331709
We are unable to properly bias our transistor. Could you suggest how do we go about testing it for oscillations then?
There was no jump in drain current, just the gate. I understand that we needed the bypass capacitors. Our circuit is stable. We did the EM simulation and k>1 from 30 MHz to 15 GHz.
Why would you put it like that?
We have only recently started working on active circuits in our lab. We do not have the best available facilities for soldering components. We found a couple of papers in which the bias network was designed without the bypass capacitors and figured this was a...
I understand that but we only tested for DC. We didnt give any RF signal.
1714175526
Yes, we did.
1714175744
We performed the DC test first. We wanted to check if we get the right drain current. We did not give the RF signal.
We designed a bias network for Cree CG2H40010F for a triple band power amplifier on Rogers substrate (Er=2.2, h=0.787mm). We biased the transistor with the typical values of Vg=-2.6V and Vd=28V. On doing so, we observed a current of 150 mA in the gate and voltage drop in drain the moment we...
This is the circuit. I used SRFT to design the matching network. Load pull simulation was done for each frequency to obtain the load and was around 24+3j ohms in the band.
Hello,
I have designed a broadband (0.8-3 GHz) medium power class AB power amplifier. While I was nothing down the output power for different values of input power (-20 to 20dB) for each frequency , I noticed that the current would drop from 78mA to 50mA when I increased the input power. For...
I did do that. My measurement still does not match the EM simulation. I tested the matching networks independently, and they match the EM simulation. However, after integrating everything, the results do not agree. When I feed the EM model of the matching network with the required load through a...
- I am using ADS Momentum Microwave.
- I am using an FR-4 substrate of 1.6mm thickness
- A non-uniform curved SIW structure
- I read somewhere that if you have a large bandwidth, it is better to reduce the mesh frequency and increase the number of cells/wavelength.
- 32 GB RAM (* cores)
Hello,
I am simulating an overall 60mm long structure consisting of two non-uniform SIW structure of 25mm each with a gap between them, from DC to 10 GHz (Npts=50). I used 6 GHz as the mesh frequency and 80 cells/wavelength. The EM simulation of the structure took more than a day. Initially, I...
I understand. At this moment, I am afraid I do not have the option to change my substrate. So, I tried simulating my final design keeping the vias in the design. I set up the adaptive frequency from DC to 11 GHz (upto third harmonic) with 50 points. I set the mesh frequency to 6 GHz and the...
I did take the vias around the transistor into consideration and it had an impact on the EM results. Without matching (just the transistor, bias network, and stability network), using an ideal ground, I could achieve up to 14 dB gain. Once I added the vias, however, the gain dropped to 11 dB...
When I tried to electrodeposit nickel film on a stainless steel substrate, the sample experienced internal stress, leading to swelling of the sample. How can I reduces this stress to obtain a smooth surface?
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